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Articles by author: James A. Cooper

• A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p945)
• Anomalously High Density of Interface States Near the Conduction Band in SiO₂/4H-SiC MOS Devices
  Published in: Silicon Carbide and Related Materials - 1999 (p1069)
• Demonstration of IMPATT Diode Oscillators in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p1359)
• Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
  Published in: Silicon Carbide and Related Materials 2007 (p1191)
• Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
  Published in: Silicon Carbide and Related Materials 2005 (p1449)
• Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities
  Published in: Silicon Carbide and Related Materials 2001 (p977)
• High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching
  Published in: Silicon Carbide and Related Materials - 1999 (p901)
• High-Performance UMOSFETs in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p1191)
• High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1005)
• High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge Terminations
  Published in: Silicon Carbide and Related Materials 2001 (p1157)
• Impact of Material Defects on SiC Schottky Barrier Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1133)
• Improved Measurements of High-Field Drift Velocity in Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p761)
• Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p703)
• Measurement of High Field Electron Transport in Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p509)
• On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
  Published in: Silicon Carbide and Related Materials 2007 (p1143)