HomeJerzy Krupka

Papers by Author: Jerzy Krupka

Paper TitlePage

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method

Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Tadeusz Łukasiewicz, Miroslaw Piersa, Kinga Kościewicz, Dominika Teklińska, Ryszard Diduszko, Paweł Skupiński, Rafał Jakieła, Jerzy Krupka

Abstract: In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside design have been investigated. Structural and electrical properties of the crystals were studied by different experimental methods.

Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside

Authors: Katarzyna Racka, Emil Tymicki, Krzysztof Grasza, Marcin Raczkiewicz, Rafał Jakieła, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Andrzej Brzozowski, Ryszard Diduszko, Miroslaw Piersa, Kinga Kościewicz, Mariusz Pawłowski, Jerzy Krupka

Abstract: Results of vanadium doping in PVT SiC bulk growth by the use of the seeding technique with an open seed backside are shown. Structural and electrical properties of 4H and 6H-SiC:V were investigated by a variety of experimental methods. In the crystal studied, the solubility limit of V in SiC was exceeded and structural defects consisting of V-rich precipitates occured. Electrical properties of this crystal were determined by the V3+/V4+ acceptor level. The V3+ charge state of vanadium was formed by compensating shallow donors (mainly nitrogen) and for both 4H and 6H polytypes it was detectable in optical absorption (in the near-IR range) and electron paramagnetic resonance.

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

Authors: Katarzyna Racka, Emil Tymicki, Marcin Raczkiewicz, Krzysztof Grasza, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Rafał Jakieła, Andrzej Brzozowski, Mariusz Pawłowski, Miroslaw Piersa, J. Sadło, Jerzy Krupka

Abstract: n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been studied. An open or closed seed backside during the growth processes have been applied. In the former, a distinct decrease backside etching of the seed was observed. Crystals have been extensively characterized with respect to their purity, quality and electrical properties using complex experimental methods. For the n-type boule an axially and radially homogeneous resistivity ~0.11 cm at 300 K was observed. Electrical properties of the p-type crystal, i.e., high room-temperature resistivity of 239 cm, were affected by compensation effects between residual donors (nitrogen and oxygen) and acceptors (mainly boron).