Papers by Author: Jisk Holleman

Abstract: Silicon-On-Insulator (SOI) technology exhibits significant performance advantages over conventional bulk silicon technology in both electronics and optoelectronics. In this chapter we present an overview of recent applications on light emission from SOI materials. Particularly, in our work we used SOI technology to fabricate light emitting diodes (LEDs), which emit around 1130 nm wavelength with an external quantum efficiency of 1.4 × 10−4 at room temperature (corresponding to an internal quantum efficiency close to 1 %). This is almost two orders of magnitude higher than reported earlier for SOI LEDs. This large improvement is due to three carrier confinement mechanisms: geometrical effects, quantum-size effects, and electric field effects. Our lateral p+/p/n+ structure is powered through two very thin silicon slabs adjacent to the p+/p and n+/p junction. Such use of thin silicon films aims to reduce the p+ and n+ contact area and to confine the injected carriers in the central lowly doped p-region. With this approach, we realized an efficient compact infrared light source with high potential switching speed for on-chip integration applications.

Abstract: Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.