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Articles by author: Johann Martin Spaeth

• A New Model for the D_I-Luminescence in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p465)
• Aluminum Related Thermally Induced Defects in Silicon
  Published in: Shallow Impurities in Semiconductors IV (p247)
• Annealing Study on Radiation-Induced Defects in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p517)
• Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors
  Published in: Defects in Semiconductors 14 (p505)
• Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
  Published in: Defects in Semiconductors 18 (p1061)
• Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p551)
• Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs
  Published in: Defects in Semiconductors 16 (p835)
• Donors and Acceptors in SiC-Studies with EPR and ENDOR
  Published in: Silicon Carbide and Related Materials - 1999 (p785)
• DX Microstructure and Nature in Al_XGa_1-XAs: Contributions from Structure Sensitive Experiments
  Published in: DX Centers (p35)
• Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process
  Published in: Defects in Semiconductors 18 (p1509)
• Electron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTe
  Published in: Defects in Semiconductors 17 (p417)
• Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p809)
• Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC
  Published in: Defects in Semiconductors 17 (p63)
• Endor Investigations on Heat Treatment Centers in Oxygen Rich Si
  Published in: Defects in Semiconductors 15 (p607)
• Endor-Investigation of the Ga Vacancy in GaP
  Published in: Defects in Semiconductors 14 (p259)