Papers by Author: Junichi Koike

Abstract: The resistive switching behavior of a low resistive p-type α-Fe₂O₃ thin film sandwiched between Fe bottom electrode and top electrodes of various materials (Fe, Ni and TiN) was studied by current-voltage measurements. When TiN was used for top electrode of memory cell, the reversible resistive switching behavior was observed for over 100 cycles. From impedance measurement, it was suggested that the resistive switching behavior in the TiN/p-type α-Fe₂O₃/Fe device is attributed to the change of the contact resistance in the interface between TiN and α-Fe₂O₃ layers.

Abstract: The thickness-ratio effects of Ni/Nb bi-layer electrodes were studied for power device applications. The reaction microstructure and electrical contact property were investigated after annealing at 1000 °C and compared with the results of an Ni electrode. Microstructure-related problems of the Ni electrode could be successfully resolved without sacrificing ohmic contact behavior by the addition of Nb to a Ni based electrode. Carbon precipitation was reduced with increasing Nb thickness by the formation of carbides, which led to good adhesion between the electrode and a wiring pad. High shear strength of the bonded wire was also obtained by the elimination of the carbon precipitates on the electrode surface.

Abstract: The Present Work Investigated the Effects of Adsorbed Moisture in Substrates on the Growth of a Self-Forming Barrier Layer between Mn and SiO₂. In Order to Control the Adsorbed Moisture, the Substrates of TEOS-SiO₂/Si Were Pre-Annealed in Vacuum at Various Temperatures. Then, Mn Thin Films Were Deposited on the Substrate with or without Pre-Annealing. The Results of Interface Reaction after Additional Post-Annealing Indicated that an Interface Reaction Layer Becomes Thinner with Decreasing the Adsorbed Moisture in the SiO₂ Substrates.

Abstract: The reaction behavior and growth kinetic of reaction layer were investigated in the Ni contact to n-type 6H-SiC. Annealing was performed at temperature in the range between 800 and 1000 °C for 1 to 240 minutes in Ar atmosphere. The interface reaction of Ni/SiC starts with Ni diffusion into SiC. Ni3Si is initially precipitated and subsequently forms the continuous layer of d-Ni2Si. Kirkendall voids are formed at the reaction front. Carbon is segregated in the interface layer of nickel silicide. The growth rate of the interface layer follows a parabolic law, meaning that the growth rate is controlled by diffusion. The growth occurs in two steps at all examined temperatures: a fast growth is followed by a slow growth. In addition, in the late stage, the growth rate changes dramatically below and above 850°C. The observed growth kinetic can be explained by the difference of Ni diffusivity and the required concentration change for phase transition depending on the phase composition and structure. The d-Ni2Si is formed in the early stage, while the e-Ni3Si2 and q-Ni2Si are formed in the late stage below and above 850°C, respectively.

Abstract: We compared the newly developed heat resistant magnesium alloy with conventional ones by Thixomolding® and aluminum alloy by die casting. Tensile properties at elevated temperatures of AXEJ6310 were equal to those of ADC12. In particular, elongation tendency of AXEJ6310 at higher temperature was better than those of the other alloys. Creep resistance of AXEJ6310 was larger than that of AE42 by almost 3 orders and smaller than that of ADC12 by almost 2 orders of magnitude. Fatigue limits at room temperature and 423K of AXEJ6310 was superior among conventional magnesium alloys.

Abstract: The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.

Abstract: Deformation mechanisms of Mg-Al-Zn (AZ31) alloys were investigated by performing tensile test at room temperature. In fine grain Mg alloys deformed at room temperature, nonbasal slip systems were found to be active as well as basal slip systems because of grain-boundary compatibility effect. Slip-induced grain-boundary sliding occurred as a complementary deformation mechanism to give rise to c-axis component of strain. With increasing grain size, the activation of the nonbasal slip systems was limited near grain boundaries. Instead of grain-boundary sliding, twinning occurred as a complementary deformation mechanism in large grained samples. Orientation analysis of twins indicated that twinning is induced by stress concentration due to the pile up of basal dislocations. The grain-size dependence on deformation mechanism was found to affect yielding behavior both microscopically and macroscopically which can influence various mechanical properties such as fatigue and creep.