Papers by Author: Katsuhiko Miya

Abstract: Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].

Abstract: As the critical dimension of LSI continues to decrease, the surface tension of water and its effect on the formation of watermarks is becoming a significant problem. It is known that watermarks are easily generated when a silicon hydrophobic surface is dried in a wet cleaning process. Many studies about watermarks have been reported [1, 2]. Additionally if the rinse and dry steps were performed under an inert (nitrogen) ambient and the rinse water had low oxygen concentration, watermarks could be effectively avoided [3, 4].