Papers by Author: Kenichiro Yoshitomi

Abstract: The use of hard and brittle materials for manufacturing optical parts, such as dies and molds are required in order to extend mold life. Although, cobalt-free tungsten carbide is one of the hardest materials, micro-cutting is very difficult due to its hardness and its brittleness. This paper investigates face turning of cobalt-free tungsten carbide using a nanopolycrystalline diamond [NPD] tool and Zinc dialkyldithiophosphate (ZnDTP) fluid. Surface roughness of the cobalt-free tungsten carbide achieved was 22nmRz, which is far larger than the theoretical value. That is, traditional cutting theory does not directly apply for face turning of cobalt-free tungsten carbide using NPD tool and ZnDTP fluid.

Abstract: The size of the photo mask and mother glass used in liquid crystal display production has increased yearly. Large rectangular glass plates are difficult to planarize using rotary-type polishing machines. We have developed a rotary-type polishing machine with tool path control that is optimized by polishing simulation for a rectangular wafer. The present paper describes the planarization of a rectangular plate by simulation. The influence of tool size and the aspect ratio of the rectangular plate on the flatness are clarified. For a square plate, the flatness obtained under optimized oscillation speed is less than a quarter of that obtained under uniform oscillation speed. For rectangular plates with aspect ratios of 1:1.25 and 1:1.5, planarization using a tool having a diameter equal to half the diagonal length of the plate is shown to be difficult because the stock removal distributions in diagonal and short side of the workpiece become the different shape.

Abstract: The miniaturization of semiconductor devices is advancing rapidly. The requirement for wafer flatness is becoming increasingly stringent as the use of shorter wavelengths in the latest laser lithography results in a smaller focusing depth of field. In our research, a flatness of 0.1 µm has been achieved over an entire 12" wafer surface by planarization with oscillation speed control type polishing. However, in addition it is necessary to increase the removal rate in order to reduce the polishing time. Although high rotational speed polishing is a solution to meet this requirement, the polishing characteristics change with the rotational conditions. Using a simulation program, we calculated that the stock removal saturates as the rotational speeds of the wafer and polishing pad are increased beyond a certain point. Also, experimental results showed that at high rotational speeds actual stock removal is significantly less than that indicated by the simulation, and that too much slurry causes unnecessary etching.