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Articles by author: L.K. Orlov

• Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si_1-xGe_x Epitaxial Structures Obtained by MBE Method
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p377)
• Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p469)
• Kinetics of Surface Processes and Mechanisms of Alloy Intermixing Near Interfaces in Si(Ge)/Si_1-xGe_x Structures Grown by Molecular Beam Epitaxy with Combined Sources
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p551)
• Peculiarities of Raman Spectra and Real Structure of Ge_1-xSi_x Solid Solution
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p465)
• Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p475)
• The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si_1-xGe_x Interfaces Abruptness
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p221)