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Articles by author: Le Si Dang

• Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p1577)
• Growth of N-Face Polarity III-Nitride Heterostructures on C-Face 4H-SiC by Plasma-Assisted MBE
  Published in: Silicon Carbide and Related Materials 2003 (p1573)
• Intraband Transitions on GaN/AlN Quantum Wells Grown on Sapphire (0001) and 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p1589)
• Photoluminescence of GaN/AlN Quantum Dots Grown on SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p1593)
• Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs
  Published in: Defects in Semiconductors 14 (p1229)