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Articles by author: Lionel C. Kimerling

• Design: New Material Challenge for Silicon ULSI
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p1)
• Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
  Published in: Defects in Semiconductors 16 (p653)
• Electronic Structure of Erbium Centers in Silicon
  Published in: Defects in Semiconductors 18 (p579)
• Energy Transfer Processes at Erbium Ions in Silicon
  Published in: Defects in Semiconductors 19 (p1485)
• Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits
  Published in: Defects in Semiconductors 18 (p585)
• High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay
  Published in: Defects in Semiconductors 18 (p1531)
• Interstitial Defect Reactions in Silicon
  Published in: Defects in Semiconductors 15 (p141)
• Interstitial Defect Reactions in Silicon Processed by Reactive Ion Etching
  Published in: Defects in Semiconductors 16 (p1433)
• Migration of Interstitial Boron in Silicon
  Published in: Defects in Semiconductors 14 (p163)
• New Impurity-Defect Reactions in Silicon
  Published in: Defects in Semiconductors 14 (p1111)
• Nonstoichiometry Related Acceptors in GaAs
  Published in: Defects in Semiconductors 15 (p945)
• Rare Earth Impurities and Impurity-Related Centers in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p365)
• Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
  Published in: Defects in Semiconductors 18 (p1401)
• Silicon Materials Engineering for the Next Millennium
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p131)
• Silicon Surface Defects: The Roles of Passivation and Surface Contamination
  Published in: Defects in Semiconductors 19 (p1719)