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Articles by author: Lucy V.C. Assali

• 3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2004 (p531)
• Bistability of Iron-Group III Acceptor Pairs in Silicon
  Published in: Defects in Semiconductors 15 (p409)
• Chemical Trends in Electronic Properties of Arsenic Vacancy-3d Transition Metal Pairs in Gallium Arsenide
  Published in: Defects in Semiconductors 19 (p893)
• Electronic States of Fe₄ and Mn₄ Clusters in Silicon
  Published in: Defects in Semiconductors 16 (p221)
• Electronic Structure of Copper-Related Defects in Germanium
  Published in: Defects in Semiconductors 17 (p779)
• Electronic Structure of Erbium Centers in Silicon
  Published in: Defects in Semiconductors 18 (p579)
• Manganese Impurity in Boron Nitride and Gallium Nitride
  Published in: Silicon Carbide and Related Materials 2004 (p1047)
• Nickel-Vacancy Complexes in Diamond: An Ab-Initio Investigation
  Published in: Silicon Carbide and Related Materials 2004 (p1043)
• Structural and Electronic Properties of Si_1-xC_xO₂
  Published in: Silicon Carbide and Related Materials 2004 (p577)
• The Structure and Bonding of Iron-Acceptor Pairs in Silicon
  Published in: Defects in Semiconductors 18 (p1333)
• Theoretical Interpretation of EPR Measurements on the Iron-Shallow Acceptor Pairs in Silicon
  Published in: Defects in Semiconductors 16 (p143)
• Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
  Published in: Defects in Semiconductors 14 (p55)