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Articles by author: M.J. Ashwin

• Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
  Published in: Defects in Semiconductors 17 (p259)
• Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces
  Published in: Defects in Semiconductors 18 (p425)
• Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion
  Published in: Positron Annihilation - ICPA-11 (p551)
• Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs
  Published in: Defects in Semiconductors 19 (p1)
• Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities
  Published in: Defects in Semiconductors 19 (p379)
• Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
  Published in: Defects in Semiconductors 17 (p265)
• Si Diffusion out of δ-Planes in a GaAs Superlattice
  Published in: Defects in Semiconductors 17 (p647)
• Vibrational Absorption from Oxygen-Hydrogen (O_i-H₂) Complexes in Hydrogenated CZ Silicon
  Published in: Defects in Semiconductors 19 (p283)