HomeM.J. Ashwin

Papers by Author: M.J. Ashwin

Paper TitlePage

Shallow Thermal Donors in Annealed CZ Silicon and Links to the NL10 EPR Spectrum: The Relevance of H, Al and N Impurities

Authors: R.C. Newman, M.J. Ashwin, R.E. Pritchard, J.H. Tucker, Edward C. Lightowlers, T. Gregorkiewicz, I.S. Zevenbergen, C.A.J. Ammerlaan, Robert J. Falster, M.J. Binns

379

Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs

Authors: R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster

Vibrational Absorption from Oxygen-Hydrogen (O_i-H₂) Complexes in Hydrogenated CZ Silicon

Authors: R.E. Pritchard, M.J. Ashwin, R.C. Newman, J.H. Tucker, Edward C. Lightowlers, M.J. Binns, Robert J. Falster, S.A. McQuaid

283

Positron Experiments in δ-Doped GaAs(Si) Superlattices: Defect Properties and Positron Diffusion

Authors: T. Laine, Kimmo Saarinen, R. Hautojärvi, C. Corbel, M.J. Ashwin, R.C. Newman

551

Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces

Authors: R.C. Newman, M.J. Ashwin, M.R. Fahy, L. Hart, S.N. Holmes, C. Roberts, J. Wagner

425

Si Diffusion out of δ-Planes in a GaAs Superlattice

Authors: L. Hart, P.F. Fewster, M.J. Ashwin, M.R. Fahy, R.C. Newman

647

Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs

Authors: M.J. Ashwin, R. Addinall, M.R. Fahy, R.C. Newman, I. Silier, E. Bauser

265

Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy

Authors: J. Wagner, M. Ramsteiner, M.J. Ashwin, M.R. Fahy, R.C. Newman, W. Braun, K. Ploog

259