Papers by Author: M. Rekas

Abstract: Chemical diffusion in TiO2-x within n - p transition regime has been studied. In this regime several point defects such as oxygen vacancies, • • O V , titanium interstitials, • • • i Ti and • • • • i Ti , electrons, ' e , and electron holes • h are present with comparable concentrations. Based on defect structure in TiO2-x the relationship between chemical diffusion coefficient and self-diffusion coefficients of both titanium and oxygen were deduced.