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Articles by author: M.S. Potsidi

• "New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p181)
• Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p59)
• IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p351)
• The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p205)