Articles by author: M. Schmidbauer
3 papers on 1 page:
1
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Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
Published in: Silicon Carbide and Related Materials 2007 (p223) -
P-Type Doping of Epitaxial 3C-SiC Layers on Silicon (001)
Published in: Silicon Carbide and Related Materials 2008 (p165) -
The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals
Published in: Silicon Carbide and Related Materials 2005 (p9)