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Articles by author: M. Stutzmann

• Elastic Energy Loss due to the Reorientation of H around B in Silicon
  Published in: Defects in Semiconductors 16 (p9)
• Electrically Detected Magnetic Resonance at Different Microwave Frequencies
  Published in: Defects in Semiconductors 19 (p963)
• Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures
  Published in: Silicon Carbide and Related Materials 2000 (p787)
• Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance
  Published in: Defects in Semiconductors 19 (p1309)
• Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
  Published in: Shallow Impurities in Semiconductors V (p339)
• Laser Characterization of Semiconductors
  Published in: Semiconductor Processing and Characterization with Lasers (p141)
• Laser Crystallisation of Silicon-Germanium Alloys
  Published in: Polycrystalline Semiconductors VI (p205)
• Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
  Published in: Beam Injection Assessment of Defects in Semiconductors (p139)
• Spin-Dependent Transport in SiC and III-V Semiconductor Devices
  Published in: Defects in Semiconductors 18 (p1915)