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Papers by Author: M. Tuominen

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High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Authors: Tsunenobu Kimoto, Qamar-ul Wahab, Alexsandre Ellison, Urban Forsberg, M. Tuominen, Rositza Yakimova, Anne Henry, Erik Janzén

921

Domain Occurance in SiC Epitaxial Layers Grown by Sublimation

Authors: M. Tuominen, Rositza Yakimova, A. Kakanakova-Georgieva, Mike F. MacMillan, Mikael Syväjärvi, Erik Janzén

151

High Growth Rate of α-SiC by Sublimation Epitaxy

Authors: Mikael Syväjärvi, Rositza Yakimova, Mike F. MacMillan, M. Tuominen, A. Kakanakova-Georgieva, Carl G. Hemmingsson, Ivan G. Ivanov, Erik Janzén

143

A Coupled Finite Element Model for the Sublimation Growth of SiC

Authors: P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén