Papers by Author: Maciej Ligowski

Abstract: Kelvin Probe Force Microscopy is an attractive technique for characterizing the surface potential of various samples. The main advantage of this technique is its high spatial resolution together with high sensitivity. However as in any nanoscale measurements also in case of KFM it is extremly difficult to describe the uncertainty of the measurement. Moreover, a wide variety of measuring conditions, together with the complicated operation principle cause situation, where no standard calibration methods are available. In the paper we propose the model of the KFM microscope and analyze the uncertainty of the KFM measurement.

Abstract: Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.