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Articles by author: Mark J. Loboda

• 4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer
  Published in: Silicon Carbide and Related Materials 2010 (p123)
• A New Method of Mapping and Counting Micropipes in SiC Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p447)
• A Study of Nitrogen Incorporation in PVT Growth of n⁺ 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p59)
• Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2008 (p283)
• Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2006 (p323)
• Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
  Published in: Silicon Carbide and Related Materials 2009 (p291)
• Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p69)
• Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2009 (p905)
• Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon
  Published in: Silicon Carbide and Related Materials - 1999 (p1463)
• Electrical Characterization of Semi-Insulating 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p669)
• Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
  Published in: Silicon Carbide and Related Materials 2010 (p269)
• Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p485)
• Growth and Characterization of N-Doped SiC Films from Trimethylsilane
  Published in: Silicon Carbide and Related Materials - 1999 (p273)
• Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p239)
• Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p175)