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Articles by author: Mark J. Loboda

• Heteroepitaxial Growth of SiC on Si by Gas Source MBE with Silacyclobutane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p239)
• Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p175)
• Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
  Published in: Silicon Carbide and Related Materials 2007 (p449)
• Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
  Published in: Silicon Carbide and Related Materials 2007 (p167)
• Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p469)
• Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates
  Published in: Silicon Carbide and Related Materials 2011 (p137)
• Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p51)
• Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
  Published in: Silicon Carbide and Related Materials 2006 (p145)
• Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging
  Published in: Silicon Carbide and Related Materials 2005 (p721)
• Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p343)
• Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2008 (p287)