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Articles by author: Masakazu Katsuno

• 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots
  Published in: Silicon Carbide and Related Materials 2001 (p47)
• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Published in: Silicon Carbide and Related Materials 2005 (p153)
• Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
  Published in: Silicon Carbide and Related Materials 2003 (p621)
• Characterization of Mechanically Polished Surfaces of Single Crystalline 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p359)
• Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
  Published in: Silicon Carbide and Related Materials 2007 (p819)
• Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction
  Published in: Silicon Carbide and Related Materials 2001 (p195)
• Etching Kinetics of α-SiC Single Crystals by Molten KOH
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p837)
• Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
  Published in: Silicon Carbide and Related Materials 2001 (p55)
• Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
  Published in: Silicon Carbide and Related Materials 2009 (p9)
• Growth and Characterization of SiC Bulk Crystals Grown on an Off-Oriented (11-20) Seed Crystal
  Published in: Silicon Carbide and Related Materials 2003 (p83)
• Growth and Defect Reduction of Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p29)
• Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
  Published in: Silicon Carbide and Related Materials 2007 (p3)
• Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p119)
• Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p49)
• Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
  Published in: Silicon Carbide and Related Materials - 2002 (p925)