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Articles by author: Masami Shibagaki

• Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
  Published in: Silicon Carbide and Related Materials 2007 (p1023)
• Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing
  Published in: Silicon Carbide and Related Materials 2005 (p807)
• Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
  Published in: Silicon Carbide and Related Materials 2004 (p609)
• Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
  Published in: Silicon Carbide and Related Materials 2008 (p679)
• Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS
  Published in: Silicon Carbide and Related Materials 2006 (p929)
• Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2009 (p783)