HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Masataka Satoh

• Annealing Behavior of N⁺-Implantation-Induced Defects in SiC at Low Temperatures
  Published in: Silicon Carbide and Related Materials 2005 (p791)
• Annealing Effect on Characteristics of p⁺n 4H-SiC Diode Formed by Al Ion Implantation
  Published in: Silicon Carbide and Related Materials 2007 (p1023)
• Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
  Published in: Silicon Carbide and Related Materials 2001 (p839)
• Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
  Published in: Silicon Carbide and Related Materials 2001 (p773)
• Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p905)
• Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing
  Published in: Silicon Carbide and Related Materials 2005 (p807)
• Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
  Published in: Silicon Carbide and Related Materials 2004 (p609)
• Doping Level Dependence of Electrical Properties for p⁺n 4H-SiC Diode Formed by Al Ion Implantation
  Published in: Silicon Carbide and Related Materials 2008 (p679)
• Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p579)
• Encapsulating Annealing of N⁺ Implanted 4H-SiC by Diamond-Like-Carbon Film
  Published in: Silicon Carbide and Related Materials 2006 (p583)
• Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p923)
• Evaluation of Specific Contact Resistance of Al, Ti, and Ni Contacts to N Ion Implanted 3C-SiC(100)
  Published in: Silicon Carbide and Related Materials 2006 (p705)
• Fabrication of pn-Junction Diode for N⁺ Implanted 4H-SiC(0001) Annealed by EBAS
  Published in: Silicon Carbide and Related Materials 2006 (p929)
• Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2009 (p783)
• Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
  Published in: Silicon Carbide and Related Materials 2009 (p1065)