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Articles by author: Matthias Bickermann

• Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p397)
• Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
  Published in: Silicon Carbide and Related Materials 2001 (p131)
• Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
  Published in: Silicon Carbide and Related Materials 2003 (p787)
• Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p445)
• Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
  Published in: Silicon Carbide and Related Materials - 1999 (p71)
• Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p95)
• Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
  Published in: Silicon Carbide and Related Materials - 2002 (p67)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)
• Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
  Published in: Silicon Carbide and Related Materials 2003 (p119)
• Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2006 (p17)
• Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2007 (p23)
• Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
  Published in: Silicon Carbide and Related Materials - 1999 (p39)
• Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p333)
• Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p127)
• LPE of Silicon Carbide Using Diluted Si-Ge Flux
  Published in: Silicon Carbide and Related Materials 2004 (p133)