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Articles by author: Matthias Bickermann

• Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p111)
• On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p139)
• Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials - 2002 (p51)
• PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p55)
• Seeded Growth of AlN on (0001)-Plane 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p983)
• Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p983)
• Stability Criteria for 4H-SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials 2000 (p25)
• Structural, Optical and Electrical Properties of Bulk AlN Crystals Grown by PVT
  Published in: Silicon Carbide and Related Materials 2003 (p1541)
• Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p69)
• Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p49)
• Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
  Published in: Silicon Carbide and Related Materials 2001 (p1445)
• Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate
  Published in: Silicon Carbide and Related Materials 2003 (p1537)
• Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
  Published in: Silicon Carbide and Related Materials 2003 (p719)