Papers by Author: Maxim V. Bogdanov

Abstract: This work focuses on computational analysis of SiC High Temperature Chemical Vapor Deposition (HTCVD) from silicon tetrachloride (SiCl4) and propane (C3H8) precursors supplied separately and diluted by argon and hydrogen, respectively. It is aimed at verification of the technological parameters providing complete precursor decomposition in the growth chamber, the optimal gas composition for SiC growth, and the required silicon-to-carbon ratio in the wafer region, as well as suppression of parasitic deposits at the reactor walls and inlet unit via the optimization of the reactor geometry and temperature distributions. As a result, a high growth rate and maximal yield are expected to be achieved due to minimal precursor losses.

Abstract: In this work the problem of growth rate decaying during growth is considered. A new design and growth profiles are suggested in order to reduce deviations of growth parameters during the process of growth.