HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Michio Tajima

• Characterization of Deep Levels in SiC by Photoluminescence Spectroscopy and Mapping
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p481)
• Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
  Published in: Defects in Semiconductors 16 (p1327)
• Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2001 (p597)
• Characterization of SiC Wafers by Photoluminescence Mapping
  Published in: Silicon Carbide and Related Materials 2005 (p711)
• Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
  Published in: Silicon Carbide and Related Materials 2007 (p349)
• Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization
  Published in: Defects in Semiconductors 19 (p1731)
• Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2006 (p275)
• Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
  Published in: Defects in Semiconductors 18 (p1749)
• Photoluminescence Mapping of a SiC Wafer in Device Processing
  Published in: Silicon Carbide and Related Materials 2003 (p569)
• Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon
  Published in: Defects in Semiconductors 18 (p1129)
• Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p395)
• Radiative Recombination Mechanism of Deep Levels in GaAs
  Published in: Defects in Semiconductors 14 (p1265)
• Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
  Published in: Silicon Carbide and Related Materials 2007 (p545)
• Role of Point Defects in Oxygen Agglomeration in Si
  Published in: Defects in Semiconductors 17 (p147)
• Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p355)