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Papers by Author: Mitsuru Hasegawa

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Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact

Authors: Yigang Chen, Mitsuru Hasegawa, S. Yamanaka, Hideyo Okushi, Naoto Kobayashi

945

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Authors: Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

227

Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond

Authors: Mitsuru Hasegawa, M. Ogura, Daisuke Takeuchi, Sadanori Yamanaka, Hideyuki Watanabe, Shien Ri, Naoto Kobayashi, Hideyo Okushi, Takashi Sekiguchi

171

Study of Ultrafine Cu Precipitates in Neutron-Irradiated Fe Utilizing Positron Quantum-Dot-Like States

Authors: Yasuyoshi Nagai, Mitsuru Hasegawa, Z. Tang, T. Kanai, M. Saneyasu

Positron Annihilation Study of Microvoids in Neutron-Irradiated Vanadium: Effects of Oxygen Impurities

Authors: T. Riewcharoon, Z. Tang, Yasuyoshi Nagai, Mitsuru Hasegawa

167

Magic Number Vacancy Clusters in Graphite and Silicon

Authors: Mitsuru Hasegawa, Z. Tang, Yasuyoshi Nagai, T. Shimamura, K. Nakazuru, Toshinobu Chiba, M. Saito

132

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations

Authors: Z. Tang, T. Nonaka, Yasuyoshi Nagai, Mitsuru Hasegawa

Osteoconduction and Bioresorption of Sintered Carbonate Apatite

Authors: Mitsuru Hasegawa, T. Ohashi, Toshihiko Tani, Y. Doi

453

Coimplantation Effects of (C and Si)/Ga in 6H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, M. Ogura, Yuuki Ishida, Sadafumi Yoshida, Hajime Okumura, Hisao Tanoue

917

Electrical and Structural Properties of Al and B Implanted 4H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue

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