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Articles by author: Moissei K. Sheinkman

• Athermal Motion of Donors under Ultrasound in CdS Crystals
  Published in: Defects in Semiconductors 18 (p1467)
• Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
  Published in: Defects in Semiconductors 16 (p787)
• Generation of Metastable Shallow Donors under Cooling in Hexagonal II-VI Semiconductors
  Published in: Defects in Semiconductors 16 (p1265)
• Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
  Published in: Defects in Semiconductors 17 (p1063)
• Optically Anisotropic Deep Luminescent Centers in GaAs
  Published in: Defects in Semiconductors 15 (p809)
• Polarized Spectroscopy of Complex Luminescence Centers
  Published in: Defects in Semiconductors 16 (p1127)
• SF₆/0₂ and CF₄/0₂ Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
  Published in: Defects in Semiconductors 18 (p1807)
• Stability of Emission Properties of Silicon Nanostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p59)
• The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in Al_xGa_1-xAs
  Published in: Defects in Semiconductors 17 (p1057)
• Ultrasound Stimulated Defect Reactions in Semiconductors
  Published in: Defect Interaction and Clustering in Semiconductors (p317)