HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Nguyen Tien Son

• A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p535)
• A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy
  Published in: Defects in Semiconductors 19 (p685)
• A Theoretical Study on Aluminium-Related Defects in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p445)
• Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p473)
• Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p443)
• As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p365)
• Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
  Published in: Silicon Carbide and Related Materials - 1999 (p559)
• Boron Centers in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p455)
• Calculation of Hyperfine Constants of Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p511)
• Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p603)
• CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p123)
• Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p449)
• Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p401)
• Defects in High-Purity Semi-Insulating SiC
  Published in: Silicon Carbide and Related Materials 2003 (p437)
• Defects in Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p45)