Papers by Author: Orlando M.N.D. Teodoro

Abstract: In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.

Abstract: In this study, it will be investigated the diffusion of critical elements, namely, carbon (C) and iron (Fe), into a steel substrate (Impax Supreme) during the diamond chemical vapour deposition (CVD) process. The substrate temperature was varied from 700 to 850°C by plasma power manipulations to enable the correlation of substrate temperature with diffusion length and depth of the above mentioned critical elements into steel during film growth conditions. Methane concentration is also a parameter which has been considered during the parametric analysis. The crystalline compounds formed during the diamond growth process are studied using XRD analysis. In addition, SIMS technique is used with depth profiling to monitor the diffusion of elements during the process. The results obtained enabled to improve traditional understanding about the mechanisms relating to diamond deposition on steel substrates using CVD processes.

Abstract: Induced defects in silver polycrystalline samples irradiated with 4 keV Ar+ were characterised with slow positron implantation spectroscopy. The implanted gas was found to interact with ion irradiation defects. The evolution of the defects and gas-defect interactions were followed through a multi-step isochronal annealing treatment. Two different defected regions were detected. A region near to the surface, due to a distribution of vacancy-like defects produced by irradiation, and a deeper one due to coalescence of Ar. The deeper defects evolve with thermal treatments and probably produce cavities which are not easily recovered.