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Papers by Author: P. Legagneux

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Microstructure and Transistor Properties of Solid-State-Crystallised Polysilicon: Effect of a Prolonged 600°C Anneal

Authors: J.L. Maurice, J. Dixmier, T. Kretz, P. Legagneux, F. Plais, Didier Pribat

335

Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy Analysis

Authors: T. Kretz, R. Stroh, P. Legagneux, O. Huet, M. Magis, Didier Pribat

311