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Articles by author: P.O. Holtz

• Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
  Published in: Defects in Semiconductors 17 (p657)
• Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells
  Published in: Shallow Impurities in Semiconductors V (p285)
• Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level
  Published in: Defects in Semiconductors 16 (p1375)
• Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells
  Published in: Defects in Semiconductors 18 (p449)
• Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
  Published in: Defects in Semiconductors 17 (p629)
• Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
  Published in: Shallow Impurities in Semiconductors V (p29)
• Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
  Published in: Defects in Semiconductors 16 (p1363)
• Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  Published in: Silicon Carbide and Related Materials - 1999 (p1571)