Articles by author: Pekka J. Hautojärvi
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Positron Annihilation Spectroscopy of the Native Vacancies in As-Grown GaAs
Published in: Defects in Semiconductors 15 (p791) -
Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
Published in: Defects in Semiconductors 14 (p527) -
Scattering Effects in a Positron Lifetime Beam Line
Published in: Positron Annihilation - ICPA-13 (p489) -
Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
Published in: Defects in Semiconductors 17 (p305) -
The EL2 Defect and Vacancy in GaAs
Published in: Positron Annihilation - ICPA-9 (p933) -
The Use of Variable Energy Positrons in Studies of Surface Layers and Interfaces
Published in: Surface Layers - Structure-Property Relations (p145) -
Two-Detector Doppler Broadening and Positron Lifetime in Multiphase Co-Si Alloys
Published in: Positron Annihilation - ICPA-12 (p207) -
Vacancies and Vacancy Defects in Si Observed by Positron Annihilation
Published in: Diffusion in Silicon (p97) -
Vacancies and Vacancy-Impurity Interactions in Metals Studied by Positrons
Published in: Vacancies and Interstitials in Metals and Alloys (p81) -
Vacancy Defects in 3.0 MeV Electron Irradiated Molybdenum Single Crystal at 20 K
Published in: Vacancies and Interstitials in Metals and Alloys (p931) -
Vacancy Defects in GaAs and AlGaAs Studied by Positron Spectroscopy under Photoexcitation
Published in: Positron Annihilation - ICPA-10 (p501) -
Vacancy in the EL2 and DX Centers Studied by Positron Annihilation
Published in: Defects in Semiconductors 17 (p983) -
Vacancy in the Metastable State of the EL2 Defect in GaAs
Published in: Defects in Semiconductors 16 (p923)