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Articles by author: Philip Hens

• In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2008 (p23)
• Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
  Published in: Silicon Carbide and Related Materials 2007 (p19)
• Defect Structures at the Silicon/3C-SiC Interface
  Published in: Silicon Carbide and Related Materials 2011 (p423)
• Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon
  Published in: Silicon Carbide and Related Materials 2011 (p177)
• Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon (100)
  Published in: Silicon Carbide and Related Materials 2009 (p151)
• Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy
  Published in: Silicon Carbide and Related Materials 2010 (p127)
• Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p11)
• Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
  Published in: Silicon Carbide and Related Materials 2006 (p259)
• Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2009 (p29)
• On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2011 (p193)
• P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p85)
• Thermal Expansion Coefficients of 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2007 (p517)