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Articles by author: R. Sielemann

• A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p487)
• DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge
  Published in: Defects in Semiconductors 19 (p53)
• Europium Induced Deep Levels in Hexagonal Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p659)
• Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
  Published in: Defects in Semiconductors 18 (p1527)
• In-Beam Mössbauer Study on Fast Diffusion
  Published in: Diffusion in Materials (p799)
• Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
  Published in: Silicon Carbide and Related Materials 2003 (p791)
• Microscopic Study of the Vacancy and Self-Interstitial in Germanium by PAC
  Published in: Defects in Semiconductors 19 (p59)
• Microscopy of Frenkel Pairs in Semiconductors by Nuclear Techniques
  Published in: Defects in Semiconductors 16 (p1109)
• Neutrino-Recoil Experiments in Germanium
  Published in: Defects in Semiconductors 15 (p1205)
• On the Pairing between Indium and Carbon Atoms in Silicon
  Published in: Defects in Semiconductors 17 (p1251)
• PAC Study of Neutrino Recoil Induced Frenkel Pairs in Copper
  Published in: Vacancies and Interstitials in Metals and Alloys (p1063)
• Radiotracer Investigation of Gadolinium Induced Deep Levels in Hexagonal Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p783)
• Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
  Published in: Silicon Carbide and Related Materials 2000 (p475)
• The Study of Point Defects in Metals by Perturbed Angular Correlation and the Mössbauer Effect
  Published in: Vacancies and Interstitials in Metals and Alloys (p25)