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Articles by author: Ralf Müller

• A New Positron Polarimeter
  Published in: Positron Annihilation - ICPA-9 (p1829)
• An X-Ray Powder Diffraction Investigation of a Fine-Grained Synthetic α-Cordierite Powder
  Published in: European Powder Diffraction 6 (p150)
• Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
  Published in: Silicon Carbide and Related Materials 2005 (p79)
• Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC
  Published in: Defects in Semiconductors 17 (p63)
• Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
  Published in: Silicon Carbide and Related Materials 2003 (p727)
• High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-Up
  Published in: Silicon Carbide and Related Materials 2004 (p31)
• Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
  Published in: Silicon Carbide and Related Materials 2006 (p259)
• In-Situ Er-Doping of SiC Bulk Single Crystals
  Published in: Silicon Carbide and Related Materials 2003 (p723)
• Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
  Published in: Silicon Carbide and Related Materials 2004 (p393)
• Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2005 (p75)
• Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
  Published in: Silicon Carbide and Related Materials 2004 (p25)
• Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p445)
• Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p633)
• Self Organization of Nanostructures during Surface Segregation of S on Ti
  Published in: Trends and New Applications of Thin Films (p411)