HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Robert Eckstein

• Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
  Published in: Silicon Carbide and Related Materials 2000 (p15)
• Equilibrium Growth Morphologies of SiC Polytypes
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p425)
• Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p623)
• Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p57)
• Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p33)