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Papers by Author: Robert Eckstein

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Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Authors: Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder

Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC

Authors: Stephan G. Müller, Robert Eckstein, J. Fricke, Dieter Hofmann, R. Hofmann, R. Horn, H. Mehling, O. Nilsson

623

Equilibrium Growth Morphologies of SiC Polytypes

Authors: Stephan G. Müller, Robert Eckstein, R.F.P. Grimbergen, Dieter Hofmann, B. Rexer

425

Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

Authors: Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt

Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Authors: Stephan G. Müller, Robert Eckstein, Wolfgang Hartung, Dieter Hofmann, M. Kölbl, Gerhard Pensl, Erwin Schmitt, Arnd Dietrich Weber, Albrecht Winnacker