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Articles by author: Robert P. Devaty

• A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC
  Published in: Silicon Carbide and Related Materials 2005 (p743)
• A Short Synopsis of the Current Status of Porous SiC and GaN
  Published in: Silicon Carbide and Related Materials 2004 (p251)
• A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
  Published in: Silicon Carbide and Related Materials 2005 (p605)
• Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p551)
• Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p461)
• Brillouin Scattering Studies of Surface Acoustic Waves in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p653)
• Brillouin Spectra of Porous p-Type 6H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p747)
• Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications
  Published in: Silicon Carbide and Related Materials 2005 (p751)
• Columnar Pore Growth in n-Type 6H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p739)
• Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p753)
• CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p255)
• D_II Revisited in an Modern Guise - 6H and 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p493)
• Differential Absorption Measurement of Valence Band Splittings in 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p567)
• Dopant-related Complexes in SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p795)
• Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p417)