Papers by Author: Rodney J. Soukup

Abstract: Thin SiC buffer layers have been grown by sputtering a graphite C target onto both (111) and (110) Si substrates. Converting the graphitic C into SiC is highly temperature dependent and relies on free silicon atoms that sublime from voids in the substrate at higher temperatures. Morphological and structural investigations were performed by Field Emission Scanning Electron Microscopy (FESEM) and X-ray Diffraction (XRD).

Abstract: Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

Abstract: Thin films of CuIn1-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn1-xGaxSe2 (CIGS) and CuIn1-xAlxSe2 (CIAS). The higher band gap near optimum value ~ 1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn0.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.