Papers by Author: Ryoichi Suzuki

Abstract: Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture occurred when the layers were irradiated by photons with energy above 2.7 eV. It was found that Ti deposition and subsequent annealing introduced vacancy clusters. We also characterized vacancy-type defects in Mg-implanted GaN. The major defect species of vacancies introduced by Mg-implantation was a complex between Ga-vacancy (V_Ga) and nitrogen vacancies (V_Ns). After annealing above 1000C, these defects started to agglomerate, and the major defect species became (V_Ga)₂ coupled with V_Ns. Through this work, we have demonstrated that positron annihilation spectroscopy is a powerful tool for characterizing vacancy-type defects in GaN for power devices applications.

Abstract: Slow positron beam was injected into a non-tapered glass capillary which was tilted angle of θ from the beam axis by a movable stage. Beam profiles of the positrons transported through the capillary were observed with a phosphor screen combined with micro channel plates as a function of θ. Some fraction of positrons was deflected with the tilting angle of the capillary.

Abstract: To improve the spatial resolution of positron annihilation spectroscopy (PAS), a system to produce an intense positron microbeam was developed in AIST. A slow positron beam, which was produced by an electron linear accelerator, was focused by a lens onto a remoderator to enhance its brightness. The brightness-enhanced beam with an intensity of ≈1 × 106 e+/s was extracted from the remoderator and focused onto the sample by a lens. The beam size at the sample was 25 μm, which is more than two and half orders of magnitude smaller than that in the magnetic transport system (≈10 mm). Hence, the spatial resolution of PAS with an AIST positron microbeam can be drastically improved relative to PAS using conventional methods.

Abstract: Positron annihilation gamma energy distribution, lifetime spectroscopy and time-of-flight method were used to study surfactant-templated mesoporous silica films deposited on glass. The lifetime depth profiling was correlated to Doppler broadening and 3γ annihilation fraction measurements to determine the annihilation characteristics inside the films. A set of consistent fingerprints for positronium annihilation, o-Ps reemission into vacuum, and pore size was directly determined. The lifetime measurements were performed in reflection mode with a specially designed lifetime spectrometer mounted on a slow positron beam system. The intensity of the 142 ns vacuum lifetime component was recorded as a function of the energy of the positron beam. In a film with high porosity a reemission efficiency of as high as 40 % was found at low positron energy. Positron lifetime in samples capped by a thin silica layer was used to determine the pore size. The energy of the reemitted o-Ps fraction was measured by a time-of-flight detector, mounted on the same system, allowing determination of both o-Ps re-emission efficiency and energy in the same sample. We demonstrate the potential of the simultaneous use of different positron annihilation techniques in the study of thin porous films.