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Articles by author: S. Dhar

• Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
  Published in: Silicon Carbide and Related Materials 2006 (p575)
• Epitaxial TaC Films for the Selective Area Growth of SiC
  Published in: Silicon Carbide and Related Materials 2007 (p183)
• Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p277)
• Nitrogen and Hydrogen Induced Trap Passivation at the SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2005 (p949)
• Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p895)
• Si/SiO₂ and SiC/SiO₂ Interfaces for MOSFETs – Challenges and Advances
  Published in: Silicon Carbide and Related Materials 2005 (p935)
• Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2011 (p453)
• Temperature-Dependent Behaviour of Chalcogenide Thin Film Contacts on Porous Silicon
  Published in: Semiconductor Materials and Technology (p77)