Papers by Author: S.S. Nagalyuk

Abstract: AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

Abstract: In this paper, we report on the current status of our technology for the commercial production of 3” 6H-SiC substrates, including PVT growth [1] of more than 3” diameter and up to 20 mm long 6H-SiC boules, post-growth processing of the boules, and characterization of the produced wafers. We discuss the preparation of SiC sources and seeds, the initial transient stage of the growth, the distribution of temperature in the growth crucible, and the Si/C ratio in the vapor. Special attention is given to the rise of the process stability and the reduction of crystallographic defects, including micropipes (open core screw dislocations), low-angle grain boundaries, foreign polytype inclusions, and graphite inclusions [2,3].