HomeS. Satoh

Papers by Author: S. Satoh

Paper TitlePage

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers

Authors: Tatsuo Fujimoto, Takashi Aigo, Masashi Nakabayashi, S. Satoh, Masakazu Katsuno, Hiroshi Tsuge, Hirokatsu Yashiro, Hosei Hirano, Taizo Hoshino, Wataru Ohashi

Abstract: Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations (BPDs) into sSSFs whereas for 4SSFs no significant changes in shape occur. Detailed analyses of Photo-luminescence (PL) signals suggest that Si- and C-core partials have different PL spectrum distributions in the wavelength range larger than 750 nm, giving rise to images with different contrasts in PL mappings.

319

Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality

Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, S. Satoh, Hirokatsu Yashiro, Taizo Hoshino, Hosei Hirano, Wataru Ohashi

Abstract: In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and structural analyses using HRTEM clarified that the SF-like structures were comprised of 6H (3, 3) stacking sequences. The stacking sequences of the SF-like structures observed are different from the SFs formed in the a-face grown crystals, suggesting that it is due to 6H nucleation on {0001} plane terraces.