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Papers by Author: S. Stepanov

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Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature

Authors: Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage

937

Growth of SiC and GaN on Porous Buffer Layers

Authors: Marina G. Mynbaeva, N.S. Savkina, Alla S. Tregubova, M.P. Scheglov, Alexander A. Lebedev, A.S. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, Natasha V. Seredova, D. Tsvetkov, S. Stepanov, A.E. Cherenkov, I. Kotousova, Vladimir Dmitriev

225

HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

Authors: Yu.V. Melnik, A.E. Nikolaev, S. Stepanov, I. Kikitina, Konstantin Vassilevski, A. Ankudinov, Yu. Musikhin, Vladimir Dmitriev

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