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Articles by author: Satoshi Kamiyama

• 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p263)
• AlN and AlGaN by MOVPE for UV Light Emitting Devices
  Published in: Advances in Light Emitting Materials (p175)
• Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p335)
• Photoluminescence and Electroluminescence Characterization of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Light Emitting Diodes
  Published in: Silicon Carbide and Related Materials 2001 (p1493)