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Articles by author: Satoshi Kuroda

• 2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p93)
• 4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p209)
• Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth
  Published in: Silicon Carbide and Related Materials 2006 (p85)
• Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2005 (p147)
• Magneto-Optical Study of Interface Diffusion in CdTe/Cd_1-xMn_xTe Multiple Quantum Wells
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p615)
• Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p563)