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Articles by author: T. Heiser

• A Study of the Copper-Pair Related Centers in Silicon
  Published in: Defects in Semiconductors 19 (p467)
• Copper in Silicon: Quantitative Analysis of Internal and Proximity Gettering
  Published in: Defects in Semiconductors 19 (p461)
• Copper Related Defect Reactions in P-Type Silicon
  Published in: Defects in Semiconductors 16 (p161)
• Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
  Published in: Defects in Semiconductors 15 (p1325)
• Interstitial Defect Reactions in Silicion: The Case of Copper
  Published in: Defect and Diffusion Forum Vols. 131-132 (p89)
• On the Motion of Iron in Silicon at Moderate Temperatures under High Electric Fields
  Published in: Defects in Semiconductors 16 (p173)