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Papers by Author: T. Troffer

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Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

Authors: T. Troffer, Gerhard Pensl, Adolf Schöner, Anne Henry, Christer Hallin, Olof Kordina, Erik Janzén

557

Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE

Authors: Jan Philipp Schmidt-Ewig, T. Troffer, Kai Christiansen, S. Christiansen, Reinhard Helbig, Gerhard Pensl, Horst P. Strunk

247

Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC

Authors: Hisayoshi Itoh, T. Troffer, Gerhard Pensl

685

Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy

Authors: Thomas Frank, T. Troffer, Gerhard Pensl, Nils Nordell, S. Karlsson, Adolf Schöner

681

Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC

Authors: S.G. Sridhara, D.G. Nizhner, Robert P. Devaty, Wolfgang J. Choyke, T. Troffer, Gerhard Pensl, David J. Larkin, H.S. Kong

461

Optical Properties of Silicon Carbide: Some Recent Developments

Authors: Robert P. Devaty, Wolfgang J. Choyke, S.G. Sridhara, L.L. Clemen, D.G. Nizhner, David J. Larkin, T. Troffer, Gerhard Pensl, Tsunenobu Kimoto, H.S. Kong

455

Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices

Authors: Gerhard Pensl, T. Troffer

115