Papers by Author: Thierry Sauvage

Abstract: High helium contents will be generated within minor actinide doped uranium dioxide blankets which could be used in fourth generation reactors. In this framework, it is essential to improve our understanding of the type of damage which a pellet could incur as a result of extensive helium build-up. This paper is an attempt at tackling this issue. Sintered uranium dioxide disks have been implanted with helium ions then annealed at various temperatures. Above a concentration of 0.4 at.% and above 1000°C, optical images of the sample surface revealed swollen grains and extensive areas which have exfoliated. Nuclear reaction microanalyses and atomic force microscopy observations were performed to demonstrate that helium has substantially precipitated within the swollen grains. Massive precipitation of the gas leads under these conditions to sample surface blistering which appears to precede flaking. Deuterium ion irradiations have also been performed at ambient and a direct flaking of the sample surface was observed, but for this phenomenon to be observed required much higher doses than in the He study, indicating that temperature could be an essential ingredient for gas to migrate and cause extensive precipitation. Such phenomena could possibly lead to degradation of the fuel.

Abstract: Tantalum oxynitride thin films are deposited by radio-frequency magnetron sputtering using a pure tantalum target under argon/oxygen/nitrogen gas mixture. The argon flow is kept constant while the oxygen and nitrogen flows are changed simultaneously in a way to keep constant the total flow of these reactive gases. We succeed to deposit TaO_xN_y films with stoichiometry ranging between those of TaN and Ta₂O₅. All films are deposited at room temperature and are amorphous. Spectroscopic ellipsometry and UV-visible spectrometry investigations show a direct relation between the optical properties and the stoichiometry of the films. In particular, the results show a variation of the refractive index from pure tantalum nitride-like films (3.76) to tantalum pentoxyde-like films (2.1), which confirms the possibility to deposit graded antireflective coatings with tantalum oxynitride.

Abstract: We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.

Abstract: Metal impurities are known to degrade dramatically the performances of silicon-based devices, even at concentrations as low as 1012 cm-3. A specific process, named proximity gettering, has been optimised by some authors in order to reduce the influence of these impurities [1]. This process consists in the building of a favourable impurity trapping zone in a non-active area of the device, by introducing implantation defects. This paper reports on the application of introducing such gettering sites as an approach to control phonon properties in 4H-SiC epilayer, and increase the thermal conductivity.

Abstract: Helium cooled Gas Fast Reactors (GFR) are designed for producing energy more efficiently and improving safety features such as a total retention of fission products (Xe, I, Cs). This study deals with the diffusion of xenon in refractory liners dedicated to the retention of fission products produced in GFR fuels. The material (W, Mo, W-Re, Mo-Re) will be located in the heart of the nuclear fuel element, where the operating temperature is in the 1000°C- 1600°C range. For the investigation of thermally activated rare gas behaviour, a γ-spectrometry analysis experiment has been performed on the 133Xenon implanted refractory liner. Preliminary results on the 133Xenon release at 1600°C from a tungsten single crystal is presented. In spite of the low concentration of implanted gas (~ppm) and simple microstructure, the prevailing mechanism appears to be complex. One and two dimensional diffusion models are used to characterize or discriminate the highlighted phenomena: burst release, diffusion and trapping of rare gas atoms.